“Integra has spent a decade innovating, maturing and commercializing our ground-breaking 100V RF GaN technology,” notes president & CEO Suja Ramnath. Combined with Integra’s thermally enhanced patents and transistor design expertise, the products offer reliable operation with a mean-time-to-failure (MTTF) of 10 7 hours. These products incorporate Integra’s 100V RF GaN technology optimized to deliver the highest power and efficiency in a single transistor while maintaining reliable operating junction temperatures. Integra also announced expansion of its 100V RF GaN product portfolio with the introduction of seven new products for avionics, directed energy, electronic warfare (EW), radar and scientific market segments with power levels up to 5kW in a single transistor. “It’s exciting to see Integra’s 100V RF GaN products move into production with customers as it signifies another industry first.” “In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third-generation 100V RF GaN technology,” says Integra’s VP of sales & marketing Tom Kole. Integra Technologies Inc (ITI) of El Segundo, CA, USA, which provides RF and microwave high-power semiconductor and pallet solutions for mission-critical applications (including radar, electronic warfare and advanced communications systems), has begun production shipments to US and European customers of its 100V RF gallium nitride (GaN) technology. 22 June 2022 Integra begins production shipments of first 100V RF GaN products
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |